Near Bandgap Excitation Inhibits the Interfacial Electron Transfer of Semiconductor/Cocatalyst

Impact Factor:

9.229

DOI number:

10.1021/acsami.9b20247

Journal:

ACS Appl. Mater. Interfaces

Key Words:

semiconductor/cocatalyst, above/near bandgap excitation, electron trapping, interfacial electron transfer, H2 evolution

Abstract:

Understanding the ultrafast interfacial electron transfer (IET) process is essential for establishing the structure–property relationship of the semiconductor/cocatalyst system for photocatalytic H2 evolution. However, the IET kinetics for the near bandgap excitation has not been reported. Herein, we investigate the IET kinetics of g-C3N4/Pt as a semiconductor/cocatalyst prototype by femtosecond time-resolved diffuse reflectance spectroscopy. We find that the near bandgap excitation of g-C3N4 inhibits the IET of g-C3N4/Pt due to electron deep trapping, resulting in a markedly decreased apparent quantum efficiency for photocatalytic H2 evolution. This work complements the kinetic understanding for the photocatalytic mechanism of the semiconductor/cocatalyst system in its whole light absorption range.

First Author:

Jiawei Xue

Correspondence Author:

Mamoru Fujitsuka, Tetsuro Majima

Volume:

12

Issue:

5

Page Number:

5920-5924

Translation or Not:

no

Date of Publication:

2020-01-08

Links to published journals:

https://pubs.acs.org/doi/abs/10.1021/acsami.9b20247