论文成果
- W. Ruan, C. Ye, M.H. Guo, F. Chen, X.H. Chen, G.M. Zhang, Y.Y. Wang,Emergence of a Coherent In-Gap State in the Sm B-6 Kondo Insulator Revealed by Scanning Tunneling Spectroscopy,Physical Review Letters,2014,112(13):136401.
- J.Q. Ma, X.G. Luo, P. Cheng, N. Zhu, D.Y. Liu, F. Chen, J.J. Ying, A.F. Wang, X.F. Lu, B. Lei, X.H. Chen,Evolution of anisotropic in-plane resistivity with doping level in Ca1-xNaxFe2As2 single crystals,Physical Review B,2014,89(17):174512.
- X.F. Lu, N.Z. Wang, G.H. Zhang, X.G. Luo, Z.M. Ma, B. Lei, F.Q. Huang, X.H. Chen,Superconductivity in LiFeO2Fe2Se2 with anti-PbO-type spacer layers,Physical Review B,2014,89(2):20507.
- X.F. Lu, N.Z. Wang, X.G. Luo, G.H. Zhang, X.L. Gong, F.Q. Huang, H. Chen,Superconductivity and phase diagram of (Li0.8Fe0.2)OHFeSe1-xSx,Physical Review B,2014,90(21):214520.
- W. Li, C. Setty, X.H. Chen, J.P. Hu,Electronic and magnetic structures of chain structured iron selenide compounds,Frontiers Of Physics,2014,9465-471.
- L.K. Li, Y.J. Yu, G.J. Ye, Q.Q. Ge, X.D. Ou, H. Wu, D.L. Feng, X.H. Chen, Y.B. Zhang,Black phosphorus field-effect transistors,Nature Nanotechnology,2014,9372-377.
- G. Li, Z. Xiang, F. Yu, T. Asaba, B. Lawson, P. Cai, C. Tinsman, A. Berkley, S. Wolgast, Y.S. Eo, D.J. Kim, C. Kurdak, J.W. Allen, K. Sun, X.H. Chen, Y.Y. Wang, Z. Fisk, L. Li,Two-dimensional Fermi surfaces in Kondo insulator SmB6,Science,2014,3461208-1212.
- Q.Y. Lei, M. Golalikhani, D.Y. Yang, W.K. Withanage, A. Rafti, J. Qiu, M. Hambe, E.D. Bauer, F. Ronning, Q.X. Jia, J.D. Weiss, E.E. Hellstrom, X.F. Wang, X.H. Chen, F. Williams, Q. Yang, D. Temple, X.X. Xi,Structural and transport properties of epitaxial Ba(Fe1-xCox)(2)As-2 thin films on various substrates,Superconductor Science & Technology,2014,27(11):115010.
- X.H. Chen, P.C. Dai, D.L. Feng, T. Xiang, F.C. Zhang,Iron-based high transition temperature superconductors,National Science Review,2014,1371-395.
- F. Chen, D. Zhao, Z.J. Xiang, C. Shang, X.G. Luo, B.Y. Pan, S.Y. Li, T. Wu, X.H. Chen,Quantum oscillations in Rashba semiconductor BiTeCl,Physical Review B,2014,90(20):201202.
