Construction of atomically dispersed Cu sites and S vacancies on CdS for enhanced photocatalytic CO2 reduction.
- 影响因子：12.732
- DOI码：10.1039/d1ta03615g
- 发表刊物：J. Mater. Chem. A
- 关键字：Cadmium sulfide, Design for testability, II-VI semiconductors, Photocatalytic activity, Cation exchanges, DFT calculation, Dispersed metals, Dissociative adsorption, Experimental analysis, Photo-catalytic, Photocatalytic performance, Sulfur vacancies, Copper
- 摘要：The controllable introduction of anion vacancies (such as O vacancies and S vacancies) or atomically dispersed metal sites in semiconductors is a promising strategy to improve photocatalytic performance. However, the facile construction of a photocatalyst containing two types of potential active sites simultaneously is still challenging. Herein, we adopt a facile cation exchange strategy to create atomically dispersed Cu sites and accompanying sulfur vacancies on the CdS surface for photocatalytic CO2 reduction. The fabricated CuCdS-5 sample exhibits 3 times improvement in CO yield with a selectivity of 92% in comparison to original CdS. Experimental analysis and DFT calculations reveal that the atomically dispersed Cu sites and S vacancies provide additional CO2 adsorption sites, redistribute the local charges and lower the dissociative adsorption energy of CO2, which enhance the photocatalytic activity. Our work provides a new perspective to design semiconductors with engineered active sites for efficient photocatalytic CO2 reduction.
- 合写作者：Zhiyu Wang, Jingjing Dong, Wenjie Li, Ruyang Wang, Song Sun, Chen Gao, Yisheng Tan
- 第一作者：Heng Cao, Jiawei Xue
- 通讯作者：Xiaodi Zhu*,Jun Bao*
- 卷号：9
- 期号：30
- 页面范围：16339-16344
- 是否译文：否
- 发表时间：2021/06/15
- 发布期刊链接：https://pubs.rsc.org/en/content/articlelanding/2021/TA/D1TA03615G
