Near Bandgap Excitation Inhibits the Interfacial Electron Transfer of Semiconductor/Cocatalyst
- 影响因子：9.229
- DOI码：10.1021/acsami.9b20247
- 发表刊物：ACS Appl. Mater. Interfaces
- 关键字：semiconductor/cocatalyst, above/near bandgap excitation, electron trapping, interfacial electron transfer, H2 evolution
- 摘要：Understanding the ultrafast interfacial electron transfer (IET) process is essential for establishing the structure–property relationship of the semiconductor/cocatalyst system for photocatalytic H2 evolution. However, the IET kinetics for the near bandgap excitation has not been reported. Herein, we investigate the IET kinetics of g-C3N4/Pt as a semiconductor/cocatalyst prototype by femtosecond time-resolved diffuse reflectance spectroscopy. We find that the near bandgap excitation of g-C3N4 inhibits the IET of g-C3N4/Pt due to electron deep trapping, resulting in a markedly decreased apparent quantum efficiency for photocatalytic H2 evolution. This work complements the kinetic understanding for the photocatalytic mechanism of the semiconductor/cocatalyst system in its whole light absorption range.
- 第一作者：Jiawei Xue
- 通讯作者：Mamoru Fujitsuka, Tetsuro Majima
- 卷号：12
- 期号：5
- 页面范围：5920-5924
- 是否译文：否
- 发表时间：2020/01/08
- 发布期刊链接：https://pubs.acs.org/doi/abs/10.1021/acsami.9b20247
